2SK1670 Datasheet | Hitachi Semiconductor

Features - - - - - Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 90 ns) Suitable for motor control, switching regulator and DC - DC converter Outline TO-3PFM 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 250 ±30 30 120 30 60 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 250 ±30 - - 2.0 - 12 - - - - - - - - - Typ - - - - - 0.075 20 3100 1330 190 45 170 270 150 1.0 90 Max - - ±10 250 3.0 0.095 - - - - - - - - - - Unit V V µA µA V Ω S p F p F p F ns ns ns ns V ns I F = 30 A, VGS = 0 I F = 30 A, VGS = 0, di F/dt = 100 A/µs I D = 15 A, VGS = 10 V, RL = 2 Ω Test conditions I D = 10 m A, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 200 V, VGS = 0 I D = 1 m A, VDS = 10 V I D = 15 A, VGS = 10 V - 1 I D = 15 A, VDS = 10 V - 1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr See characteristic curves of 2SK1669. Power vs. Temperature Derating 120 Channel Dissipation Pch (W) 1,000 300 Drain Current ID (A) 100 30 Maximum Safe Operation...