2SK1880L Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2SK1880(L), 2SK1880(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 600 ±30 1.5 3.0 1.5 20 150 - 55 to +150 Unit V V A A A W °C °C 2SK1880(L), 2SK1880(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 600 ±30 - - 2.0 - 0.85 - - - - - - - - - Typ - - - - - 6.5 1.4 250 55 8 10 25 35 30 0.95 350 Max - - ±10 100 3.0 8.0 - - - - - - - - - - Unit V V µA µA V Ω S p F p F p F ns ns ns ns V µs I F = 1.5 A, VGS = 0 I F = 1.5 A, VGS = 0, di F / dt = 100 A / µs Test conditions I D = 10 m A, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1 m A, VDS = 10 V ID = 1 A VGS = 10 V- 1 ID = 1 A VDS = 20 V- 1 VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 30 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2SK1880(L), 2SK1880(S) Power vs. Temperature Derating 30 Channel Dissipation Pch (W) 10 Drain Current I D (A) 3 1 O a pe by rea rat R is ion DS lim in (o ite th n) d...