2SK1933 Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 900 ±30 10 30 10 150 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 900 ±30 - - 2.0 - 4.5 - - - - - - - - - Typ - - - - - 0.9 7 2620 830 320 30 140 285 170 0.9 1600 Max - - ±10 250 3.0 1.2 - - - - - - - - - - Unit V V µA µA V Ω S p F p F p F ns ns ns ns V ns I F = 10 A, VGS = 0 I F = 10 A, VGS = 0, di F / dt = 100 A / µs Test conditions I D = 10 m A, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 720 V, VGS = 0 I D = 1 m A, VDS = 10 V ID = 5 A VGS = 10 V- 1 ID = 5 A VDS = 20 V- 1 VDS = 10 V VGS = 0 f = 1 MHz ID = 5 A VGS = 10 V RL = 6 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body tp drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Power vs. Temperature Derating 150 Channel Dissipation Pch (W) Maximum Safe Operation Area 50 30 Drain Current I D (A) 10 lim in Op ite this era d a tio by re n R a is D S (o n) µs 0 10 µs PW = 1 m s 3 1 0.3 0.1 s...