2SK1947 Datasheet | Hitachi Semiconductor

Features - - - - - Low on-resistance High speed switching Low Drive Current Built-In Fast Recovery Diode (trr = 140 ns) Suitable for Switching regulator, Motor Control Outline TO-3PL 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 250 ±30 50 200 50 200 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 250 ±30 - - 2.0 - 20 - - - - - - - - - Typ - - - - - 0.047 30 5810 2360 270 75 270 420 200 1.2 140 Max - - ±10 250 3.0 0.06 - - - - - - - - - - Unit V V µA µA V Ω S p F p F p F ns ns ns ns V ns I F = 50 A, VGS = 0 I F = 50 A, VGS = 0, di F / dt = 100 A / µs Test conditions I D = 10 m A, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 200 V, VGS = 0 I D = 1 m A, VDS = 10 V I D = 25 A VGS = 10 V- 1 I D = 25 A VDS = 10 V- 1 VDS = 10 V VGS = 0 f = 1 MHz I D = 25 A VGS = 10 V RL = 1.2 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Power vs. Temperature Derating 300 Channel Dissipation Pch (W) 1000 300 Drain Current I D (A) 100 30 10 200 Maximum Safe Operation Area 3 by R DS (on) 1 0.3 0.1 1m Op = s era 10 ms tio n( (1 T s Operation in...