2SK2059L Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance High speed switching No Secondary Breakdown Suitable for Switching regulator, DC - DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2SK2059(L), 2SK2059(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 600 ±30 3 6 3 20 150 - 55 to +150 Unit V V A A A W °C °C 2SK2059(L), 2SK2059(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 600 ±30 - - 2.0 - 1.2 - - - - - - - - - Typ - - - - - 3.8 2.0 295 70 12 8 25 65 30 0.9 220 Max - - ±10 100 3.0 5.0 - - - - - - - - - - Unit V V µA µA V Ω S p F p F p F ns ns ns ns V ns I F =3 A, VGS = 0 I F = 3A, VGS = 0, di F / dt = 100 A / µs Test conditions I D = 10 m A, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS =500 V, VGS = 0 I D = 1 m A, VDS = 10 V I D = 1A VGS = 10 V- 1 I D = 1A VDS = 10 V- 1 VDS = 10 V VGS = 0 f = 1 MHz I D = 1A VGS = 10 V RL = 30Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2SK2059(L), 2SK2059(S) Power vs. Temperature Derating 40 Pch (W) Maximum Safe Operation Area 10 3 Drain Current ID (A) 30 1 0.3 0.1 0.03 0.01 50 100 150 Tc (°C) 200 1 Case Temperature 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Ta = 25°C...