2SK2114 Datasheet | Hitachi Semiconductor

Features - - - - - Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM 12 3 1. Gate 2. Drain 3. Source 2SK2114, 2SK2115 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2114 2SK2115 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 450 500 ±30 5 20 5 35 150 - 55 to +150 Unit V V A A A W °C °C 2SK2114, 2SK2115 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SK2114 2SK2115 V(BR)GSS I GSS I DSS Symbol V(BR)DSS Min 450 500 ±30 - - - - - - ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) RDS(on) 2.0 - - |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2.5 - - - - - - - - - - 1.0 1.2 4.0 640 160 20 10 25 50 30 0.95 300 3.0 1.4 1.5 - - - - - - - - - - S p F p F p F ns ns ns ns V ns I F = 5 A, VGS = 0 I F = 5 A, VGS = 0, di F / dt = 100 A / µs I D = 2.5 A VDS = 10 V- 1 VDS = 10 V VGS = 0 f = 1 MHz I D = 2.5 A VGS = 10 V RL = 12 Ω V Ω I D = 1 m A, VDS = 10 V I D = 2.5 A, VGS = 10 V- 1 Typ - Max - Unit V Test conditions I D = 10 m A, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK2114 2SK2115 Gate to source cutoff voltage Static drain to source on state resistance 2SK2114...