2SK217
2SK217 is Silicon N-Channel Junction FET manufactured by Hitachi Semiconductor.
Silicon N-Channel Junction FET
Application
VHF amplifier
Outline
MPAK
3 1 2
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings (Ta = 25°C)
Item Gate to drain current Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VGDO ID IG Pch Tch Tstg Ratings
- 30 20 10 150 150
- 55 to +150 Unit V m A m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Gate to drain breakdown voltage Gate cutoff current Gate to source cutoff voltage Drain current Forward transfer admittance Reverse transfer capacitance Note: Grade Mark I DSS C ZC 2.5 to 5 D ZD 4 to 8 Symbol V(BR)GDO I GSS VGS(off) I DSS- |yfs| Crss
Min
- 30
- - 2.5
- - E ZE 6 to 12
Typ
- -
- - 8.0 0.1
Max
- - 10
- 2.5 12
- -
Unit V n A V m A m S p F
Test conditions I G =
- 100 µA VGS =
- 0.5 V, VDS = 0 VDS = 5 V, ID = 10 µA VDS = 5 V, VGS = 0 VDS = 5 V, VGS = 0, f = 1 k Hz VDS = 5 V, VGS = 0, f = 1 MHz
1. The 2SK217 is grouped by I DSS as follows.
Maximum Channel Power Dissipation Curve Channel Power Dissipation Pch (m W) 150 Typical Output Characteristics (1) 10 VGS = 0 Drain Current ID (m A) 8
- 0.2 V 6
- 0.4 4
- 0.6 2
- 0.8
- 1.0
P ch = 0 15
W...
