2SK2220 Datasheet | Hitachi Semiconductor

Features - - - - - - - High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good plementary characteristics Equipped with gate protection diodes Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain 2SK2220, 2SK2221 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2220 2SK2221 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. Value at Tc = 25 °C VGSS ID I DR Pch- Tch Tstg Symbol VDSX Ratings 180 200 ±20 8 8 100 150 - 55 to +150 Unit V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SK2220 2SK2221 V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss t on t off Symbol V(BR)DSX Min 180 200 ±20 0.15 - 0.7 - - - - - Typ - - - - - 1.0 600 800 8 250 90 Max - - - 1.45 12 1.4 - - - - - V V V S p F p F p F ns ns I G = ±100 µA, VDS = 0 I D = 100 m A VDS = 10 V I D = 8 A, VGD = 0 V- 1 ID = 3 A VDS = 10 V- 1 VGS = - 5 V VDS = 10 V f = 1 MHz VDD = 30 V ID = 4 A Unit V Test conditions I D = 10 m A, VGS = - 10 V Gate to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note 1. Pulse Test 2SK2220, 2SK2221 Power vs. Temperature Derating 150 Pch (W) 20 Ta = 25°C 10 Drain Current ID (A) PW...