2SK2315 Datasheet | Hitachi Semiconductor

Features - - - - - Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK 2 1 4 D G 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 60 ±20 2 4 2 1 150 - 55 to +150 Unit V V A A A W °C °C Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the alumina ceramic board (12.5 × 20 × 0.7mm) 3. Marking is “TY” Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 ±20 - - 0.5 - - Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note 1. Pulse Test |yfs| Ciss Coss Crss t on t off 1.5 - - - - - Typ - - - - - 0.4 0.35 1.8 173 85 23 21 85 Max - - ±5 5 1.5 0.6 0.45 - - - - - - Unit V V µA µA V Ω Ω S p F p F p F ns ns Test Conditions I D = 10 m A, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 m A, VDS = 10 V I D = 0.3 A VGS = 3 V- 1 ID = 1 A VGS = 4 V- 1 ID = 1 A VDS = 10 V- 1 VDS = 10 V VGS = 0 f = 1 MHz I D = 1 A, RL = 30 Ω VGS = 10 V Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) Power vs. Temperature Derating 1.6 Channel Dissipation Pch- - (W) (- - on the almina ceramic board) 5 100 µs 2 Maximum Safe Operation Area I D (A) 1 0.5 = m...