2SK2393 Datasheet | Hitachi Semiconductor

Features - - - - - Low on-resistance, High breakdown voltage High speed switching Low Drive Current No Secondary Breakdown Suitable for Switching regulator, Motor Control Outline TO-3PL 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 1500 ±20 8 20 8 200 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Symbol V(BR)DSS I GSS Min 1500 - - 2.0 - 1.8 - - - - - - - - - Typ - - - - 1.9 3.0 4370 560 200 75 180 260 125 0.9 6.5 Max - ±1 500 4.0 2.8 - - - - - - - - - - Unit V µA µA V Ω S p F p F p F ns ns ns ns V µs I F = 8 A, VGS = 0 I F = 8 A, VGS = 0, di F / dt = 100 A / µs Test Conditions I D = 10 m A, VGS = 0- 1 VGS = ±20 V, VDS = 0 VDS = 1200 V, VGS = 0 I D = 1 m A, VDS = 10 V ID = 4 A VGS = 15 V- 1 ID = 4 A VDS = 20 V- 1 VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.5 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Power vs. Temperature Derating 400 Pch (W) I D (A) 100 30 10 3 Maximum Safe Operation Area Op...