2SK2408 Datasheet | Hitachi Semiconductor

Features - - - - - Low on-resistance Built-in fast recovery diode (trr = 120 ns typ) High speed switching Low drive current Suitable for switching regulator, Motor control Outline TO-220AB 3 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 500 ±30 7 28 7 60 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 500 ±30 - - 2.0 - 3.5 - - - - - - - - - Typ - - - - - 0.7 6.0 1100 310 50 15 55 100 48 0.9 120 Max - - ±10 250 3.0 0.9 - - - - - - - - - - Unit V V µA µA V Ω S p F p F p F ns ns ns ns V ns I F = 7 A, VGS = 0 I F = 7 A, VGS = 0, di F / dt = 100 A / µs Test Conditions I D = 10 m A, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 400 V, VGS = 0 I D = 1 m A, VDS = 10 V I D = 4A VGS = 10 V- 1 ID = 4 A VDS = 10 V- 1 VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.5 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr See characteristic curves of 2SK1516 Power vs. Temperature Derating 80 Pch (W) I D (A) 50 20 10 5 2 1 0.5 0.2 0.1 0.05 0 50 100 150 Tc (°C) 200 1 Case Temperature 3 10 30 100 300 1000 Drain to Source Voltage V DS (V) Ta = 25...