2SK2726 Datasheet | Hitachi Semiconductor

Features - - - - - Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ratings Outline TO- 220CFM G 1 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)- I DR I AP - 3 3 2 1 Ratings 500 ±30 7 28 7 7 2.7 30 150 - 55 to +150 Unit V V A A A A m J W °C °C EAR- Pch- Tch Tstg Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 500 ±30 - - 2.5 - 3.5 - - - - - - - - - - - - Typ - - - - - 0.75 6.0 1100 330 65 21 5 8 20 65 60 40 0.95 260 Max - - ±10 10 3.5 0.95 - - - - - - - - - - - - - Unit V V µA µA V Ω S p F p F p F nc nc nc ns ns ns ns V ns I D = 7A, VGS = 0 I F = 7A, VGS = 0 di F/ dt = 100A/µs Test Conditions I D = 10m A, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±25V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1m A, VDS = 10V- 1 I D = 4A, VGS = 10V- 1 I D = 4A, VDS = 10V- 1 VDS = 10V VGS = 0 f = 1MHz VDD = 400V VGS = 10V I D = 7A VGS = 10V, ID = 4A RL = 7.5Ω Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance |yfs| Ciss...