2SK2729 Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO- 3P 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)- I DR I AP - 3 3 2 1 Ratings 500 ±30 20 80 20 20 22 150 150 - 55 to +150 Unit V V A A A A m J W °C °C EAR- Pch- Tch Tstg Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 500 ±30 - - 2.5 - 9 - - - - - - - - - - - - Typ - - - - - 0.24 15 3300 900 120 55 14 17 45 140 150 85 1.0 400 Max - - ±10 10 3.5 0.29 - - - - - - - - - - - - - Unit V V µA µA V Ω S p F p F p F nc nc nc ns ns ns ns V ns I D = 20A, VGS = 0 I F = 20A, VGS = 0 di F/ dt = 100A/µs Test Conditions I D = 10m A, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±25V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1m A, VDS = 10V- 1 I D = 10A, VGS = 10V- 1 I D = 10A, VDS = 10V- 1 VDS = 10V VGS = 0 f = 1MHz VDD = 400V VGS = 10V I D = 20A VGS = 10V, ID = 10A RL = 3Ω Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance |yfs| Ciss Coss Reverse transfer capacitance Crss Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr Main Characteristics...