2SK2735 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS = 20 mΩ typ. - High speed switching - 4V gate drive device can be driven from 5V source Outline DPAK- 2 D 1 2 G 3 1 2 1. Gate 2. Drain 3. Source 4. Drain 2SK2735(L), 2SK2735(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 30 ±20 20 80 20 20 150 - 55 to +150 Unit V V A A A W °C °C 2SK2735(L), 2SK2735(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 30 ±20 - - 1.0 - - 8 - - - - - - - - - Typ - - - - - 20 35 16 750 520 210 16 225 85 90 1.0 40 Max - - ±10 10 2.0 28 50 - - - - - - - - - - Unit V V µA µA V mΩ mΩ S p F p F p F ns ns ns ns V V I F = 20A, VGS = 0 di F/ dt = 50A/µs I F = 20A, VGS = 0 di F/ dt = 50A/µs Test Conditions I D = 10m A, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 30 V, VGS = 0 I D = 1m A, VDS = 10V I D = 10A, VGS = 10V- 1 I D = 10A, VGS = 4V- 1 I D = 10A, VDS = 10V- 1 VDS = 10V VGS = 0 f = 1MHz I D = 10A, VGS = 10V RL =...