2SK2737
2SK2737 is N-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance R DS(on) = 10 mΩ typ.
- 4V gate drive devices.
- High speed switching
Outline
TO- 220CFM
G 1 2 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg
Note2 Note1
Ratings 30 ±20 45 180 45 30 150
- 55 to +150
Unit V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 30 ±20
- - 1.0
- - 20
- -
- -
- -
- -
- Typ
- -
- -
- 10 15 30 1570 1100 410 32 300 180 200 1.0 75 Max
- - ±10 10 2.0 14 25
- -
- -
- -
- -
- - Unit V V µA µA V mΩ mΩ S p F p F p F ns ns ns ns V ns I F = 45A, VGS = 0 I F = 45A, VGS = 0 di F/ dt = 50A/µs Test Conditions I D = 10m A, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 30 V, VGS = 0 I D = 1m A, VDS = 10VNote3 I D = 20A, VGS = 10VNote3 I D = 20A, VGS = 4VNote3 I D = 20A, VDS = 10VNote3 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, ID = 20A RL = 0.5Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body- drain diode forward voltage Body- drain diode reverse recovery time Note: 3. Pulse test V(BR)GSS I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr
Main Characteristics
Power vs. Temperature Derating 40 500 200
Pch (W) I D (A)
Maximum Safe Operation Area
0...
