2SK3418
2SK3418 is Silicon N Channel MOS FET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance RDS(on) = 4.3 m typ.
- 4 V gate drive device
- High speed switching
Outline
TO-220AB
ADE-208-941 (Z) 1st. Edition Mar. 2001
1 2 3
1. Gate 2. Drain (Flange) 3. Source
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current
VDSS VGSS ID I Note1
D (pulse)
I DR
Avalanche current Avalanche energy Channel dissipation
I Note3 AP
E Note3 AR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C: Rg ≥ 50 Ω
Value 60 ±20 85 340 85
60 308 110 150
- 55 to +150
Unit V V A A A
A m J W °C °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS...
