2SK522 Datasheet | Hitachi Semiconductor

Silicon N-Channel Junction FET Application VHF amplifier, Mixer, local oscillator Outline SPAK 1. Gate 2. Source 3. Drain Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain voltage Gate current Drain current Channel power dissipation Channel temperature Storage temperature Symbol VGDO IG ID Pch Tch Tstg Ratings - 30 10 20 200 150 - 55 to +150 Unit V m A m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Gate to drain breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure Note: Drain I DSS D 4 to 8 E 6 to 10 Symbol V(BR)GDO I GSS I DSS- Min - 30 - 4 - 8 - - 20 - F 10 to 20 Typ - - - - 10 6.8 0.1 27 1.7 Max - - 10 20 - 3 - - - - 2.5 Unit V n A m A V m S p F p F d B d B Test conditions I G = - 100 µA, IS = 0 VGS = - 0.5 V, VDS = 0 VDS = 5 V, VGS = 0 VDS = 5 V, ID = 10 µA VDS = 5 V, VGS = 0, f = 1 k Hz VDS = 5 V, VGS = 0, f = 1 MHz VGS(off) y fs Ciss Crss PG NF VDS = 5 V, VGS = 0, f = 100 MHz 1. The 2SK522 is grouped by I DSS as follows. Maximum Channel Power Dissipation Curve Channel Power Dissipation Pch (m W) 300 Drain Current ID (m A) Typical Output Characteristics (1) 10 VGS = 0 8 - 0.2 V 6 - 0.4 4 - 0.6...