B1032
B1032 is 2SB1032 manufactured by Hitachi Semiconductor.
2SB1032(K)
Silicon PNP Triple Diffused
Application
Power switching plementary pair with 2SD1436(K)
Outline
TO-3P
1 2 3
1. Base 2. Collector
(Flange) 3. Emitter
2 1
1.0 kΩ (Typ)
200 Ω (Typ)
2SB1032(K)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current C to E diode forward current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C
Symbol VCBO VCEO VEBO IC I C(peak) ID- 1 PC
- 1 Tj Tstg
Rating
- 120
- 120
- 7
- 10
- 15 10 80 150
- 55 to +150
Unit V V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO voltage
- 120
Emitter to base breakdown voltage
V(BR)EBO
- 7
Collector cutoff current
DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test
I CBO I CEO h FE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off
- - 1000
- -
- -...
