B1109
B1109 is 2SB1109 manufactured by Hitachi Semiconductor.
2SB1109, 2SB1110
Silicon PNP Epitaxial
Application
Low frequency high voltage amplifier plementary pair with 2SD1609 and 2SD1610
Outline
TO-126 MOD
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
1. Emitter 2. Collector 3. Base
Ratings 2SB1109
- 160
- 160
- 5
- 100 1.25 150
- 45 to +150
2SB1110
- 200
- 200
- 5
- 100 1.25 150
- 45 to +150
Unit V V V m A W °C °C
2SB1109, 2SB1110
Electrical Characteristics (Ta = 25°C)
2SB1109
2SB1110
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base breakdown voltage
V(BR)CBO
- 160
- -
- 200
- - V
IC =
- 10 µA, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO...
