C1881 Datasheet | Hitachi Semiconductor

2SC1881(K) Silicon NPN Triple Diffused Application .. High gain amplifier power switching Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 6.8 kΩ (Typ) 400 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC - Tj Tstg Ratings 60 60 7 3 6 30 150 - 55 to +150 Unit V V V A A W °C °C 2SC1881(K) Electrical Characteristics (Ta = 25°C) Item Symbol Min 60 7 - - 1000 500 Collector to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test. VCE(sat) t on t off - - - Typ - - - - - - - 1 5 Max - - 0.2 0.4 - - 1.2 - - V µs µs Unit V V m A m A Test conditions I C = 50 m A, RBE = ∞ I E = 50 m A, IC = 0 VCB = 60 V, IE = 0 VCE = 30 V, RBE = ∞ VCE = 1.5 V I C = 1.5 A- 1 I C = 2.5 A- 1 I C = 2.5 A, IB = 20 m A- 1 VCC = 11 V, IC = 2 A, I B1 = - IB2 = 8 m A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio h FE .. Area of Safe Operation Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) Collector current IC (A) 10 i C (peak) 5 IC max 2 s 0m =1 pw on rati Ope C) DC = 25° (T C 1.0 0.5 0.2 0.1 Ta = 25°C 1 shot...