C1890 Datasheet | Hitachi Semiconductor

2SC1890, 2SC1890A Silicon NPN Epitaxial Application - Low frequency high voltage amplifier - plementary pair with 2SA893/A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1890, 2SC1890A Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SC1890 90 90 5 50 300 150 - 55 to +150 2SC1890A 120 120 5 50 300 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) 2SC1890 Item Collector to emitter breakdown voltage Collector cutoff current Symbol V(BR)CEO I CBO 2SC1890A Max - 0.5 - Min 120 - - Typ - - - - - - 200 1.6 2 Max - - 0.5 1200 0.75 0.5 - - 10 V V MHz p F d B Unit V µA µA Test conditions I C = 1 m A, RBE = ∞ VCB = 75 V, IE = 0 VCB = 100 V, IE = 0 VCE = 12 V, IC = 2 m A VCE = 12 V, IC = 2 m A I C = 10 m A, IB = 1 m A VCE = 12 V, IC = 2 m A VCB = 25 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 50 µA, Rg = 50 kΩ, f = 1 k Hz Min 90 - - Typ - - - - - - 200 1.6 2 DC current tarnsfer ratio h FE- Base to emitter voltage VBE Collector to emitter saturation voltage - - - - - 1200 250 0.75 0.5 - - 10 - - - - -...