C3652
C3652 is 2SC3652 manufactured by Hitachi Semiconductor.
2SC3652
Silicon NPN Epitaxial
Application
High frequency amplifier
Outline
TO-126 MOD
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation
Junction temperature Storage temperature Note: 1. Value at TC = 25°C
Symbol VCBO VCEO VEBO IC IC(peak) PC PC- 1 Tj Tstg
Ratings 30 20 3.5 0.3 0.5 0.8 5 150
- 55 to +150
Unit V V V A A W W °C °C
2SC3652
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO voltage
Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage
ICBO IEBO h FE VBE VCE(sat)
- - 40
- -
Gain bandwidth product f T
Collector output capacitance Cob
- -
Input capacitance
Cib
- Note: 1. Pulse test
Typ
- -
- -
- -
1.2 5 10
Max
- Unit...
