C4692 Datasheet | Hitachi Semiconductor

Features - High speed switching 0.5 µs Max - High breakdown voltage VCBO = 1500 V - Isolated package; TO-3PFM Outline TO-3PFM 1. Base 2. Collector 3. Emitter 2SC4692 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current .. Symbol VCBO VCEO VEBO IC IC (surge) PC- Tj Tstg Ratings 1500 800 5 12 20 50 150 - 55 to +150 Unit V V V A A W °C °C Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min 800 5 - 15 - - - Typ - - - - - - - Max - - 500 35 5 1.5 0.5 V V µs Unit V V µA Test conditions IC = 10 m A, RBE = _ IE = 10 m A, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A IC = 10 A, IB = 2 A IC = 10 A, IB = 2 A ICP = 8 A, IB1 = 1.4 A, IB2 = - 2.5 A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time V(BR)EBO ICES h FE VCE (sat) VBE (sat) tf 2SC4692 Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) .. 50 100 Case Temperature TC (°C) Area of Safe...