C4742 Datasheet | Hitachi Semiconductor

Feature - High breakdown voltage VCES = 1500 V - Built-in damper diode type Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 ID .. 2SC4742 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCES VEBO IC IC(peak) IC(surge) PC- Tj Tstg ID Ratings 1500 6 6 7 16 50 150 - 55 to +150 7 Unit V V A A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Fall time Symbol V(BR)EBO ICES h FE VCE(sat) VBE(sat) VECF tf Min 6 - - - - - - Typ - - - - - - - Max - 500 25 2.0 1.5 2.0 0.4 V V V µs Unit V µA Test conditions IE = 400 m A, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A IC = 5 A, IB = 1.25 A IC = 5 A, IB = 1.25 A IF = 6 A ICP = 5 A, IB1 = 1 A, IB2 = - 2...