C4747
C4747 is 2SC4747 manufactured by Hitachi Semiconductor.
Feature
- High breakdown voltage VCBO = 1500 V
- High speed switching tf ≤ 0.3 µs
Outline
TO-3PFM
1. Base 2. Collector 3. Emitter
2SC4747
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC(surge) PC- Tj Tstg
Ratings 1500 800 6 10 20 50 150
- 55 to +150
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 800 6
- -
- -
- Typ
- -
- -
- -
- Max
- - 500 30 5 1.5 0.3 V V µs Unit V V µA Test conditions IC = 10 m A, RBE = _ IE = 10 m A, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A IC = 8 A, IB = 1.6 A IC = 8 A, IB = 1.6 A ICP = 7 A, IB1 = 1.4 A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time V(BR)EBO ICES h FE VCE(sat) VBE(sat) tf
2SC4747
Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W)
50 100 Case Temperature TC (°C) Area of Safe Operation
(100 V, 20 A) f = 64 k Hz Ta = 25°C
Collector Current IC (A)
For picture tube...
