C4913
C4913 is 2SC4913 manufactured by Hitachi Semiconductor.
Features
- High breakdown voltage
- V(BR)CEO = 2000 V min
Outline
TO-220AB
1 23
1. Base 2. Collector
(Flange) 3. Emitter
2SC4913
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC I C(peak) PC Tj Tstg
Ratings 2000 2000 6 20 40 1.5 150
- 55 to +150
Unit V V V m A m A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage
Symbol I CES I CEO I EBO h FE VCE(sat)
Min
- -
- 10
- Typ
- -
- -
- Max Unit 500 µA 5 m A 500 µA
- 5.0 V
Test conditions VCE = 2000 V, RBE = 0 VCE = 2000 V, RBE = ∞ VEB = 6 V, IC = 0 VCE = 5 V, IC = 1 m A IC = 10 m A, IB = 2 m A
Collector Power Dissipation Pc (W) Collector Current I C (m A)
Maximum Collector Power Dissipation Curve 2.0
0 50 100 150 200 Ambient Temperature Ta (°C)
Area of Safe Operation
100 50 ic(peak)
1 shot pulse Ta = 25°C
Pw
=1 10
20 I...
