C5022 Datasheet | Hitachi Semiconductor

Features - High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM .Data Sheet.co.kr 12 3 1. Base 2. Collector 3. Emitter Datasheet pdf - http://..net/ 2SC5022 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC I C (peak) PC Tj Tstg Ratings 1500 1500 6 20 40 2 150 - 55 to +150 Unit V V V m A m A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Symbol I CES I CEO I EBO h FE VCE (sat) Min - - - 10 - Typ - - - - - .Data Sheet.co.kr Max 10 100 10 - 5.0 Unit µA µA µA Test conditions VCE = 1500 V, RBE = 0 VCE = 1500 V, RBE = ∞ VEB = 6 V, IC = 0 VCE = 5 V, IC = 1 m A I C = 10 m A, IB = 2 m A Datasheet pdf - http://..net/ 2SC5022 Collector Power Dissipation vs. Ambient Temperature 4 Collector Power Dissipation Pc (W) Maximum Safe Operation Area 100 I C (m A) 50 20 10 0.5 0.2 0.1 100 200 500 1000 2000 5000 Collector to Emitter Voltage VCE (V) ic(peak) I C max 1 shot pulse Ta = 25 °C ms =1 s Pw 10 m ion at er C) Op 25° DC c = (T 50 100 150 Ambient Temperature Ta (°C) Collector Current Typical Output Characteristics 1.8 m A 1.6 m A 20 I C (m...