C5447 Datasheet | Hitachi Semiconductor

Features - High breakdown voltage VCES = 1500 V - High speed switching tf = 0.15 µsec (typ.) at f H = 64 k Hz - Isolated package TO- 3PFM Outline TO- 3PFM C 2 1 B 3 E 2 3 1. Base 2. Collector 3. Emitter Free Datasheet http://.datasheetlist./ 2SC5447 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCES VEBO IC ic(peak) PC Tj Tstg Note1 Ratings 1500 6 8 16 50 150 - 55 to +150 8 Unit V V A A W °C °C A Collector to emitter diode forward current ID Electrical Characteristics (Ta = 25°C) Item Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio DC current transfer ratio Symbol V(BR)EBO ICES h FE1 h FE2 Min 6 - 5 4 - - - - - Typ - - - - - - - 0.2 0.15 Max - 500 25 6 5 1.5 2 0.4 - V V V µs µs Unit V µA Test Conditions IE = 400m A, IC = 0 VCE = 1500V, RBE = 0 VCE = 5 V, IC = 1A VCE = 5 V, IC = 5A IC = 5A, IB = 1.25A IC = 5A, IB = 1.25A IF = 8A ICP = 4A, IB1 = 1.2A f H = 31.5k Hz ICP = 4A, IB1 = 1A f H = 64k Hz Collector to emitter saturation VCE(sat) voltage Base to emitter saturation voltage Collector to emitter diode forward voltage Fall time Fall time VBE(sat) VECF tf tf Free Datasheet http://.datasheetlist./ 2SC5447 Main Characteristics Collector Power Dissipation vs. Temperature 80 Collector Power Dissipation Pc (W) 50 20 60 Collector Current I C(A) 10 5 2 1 0.5 0.2 0 50 100 Case Temperature 150 Tc (°C) 200 Area of Safe...