C5449 Datasheet | Hitachi Semiconductor

Features - High breakdown voltage VCBO = 1500 V - High speed switching tf = 0.15 µsec (typ.) at f H = 64 k Hz - Isolated package TO- 3PFM Outline TO- 3PFM 2 3 1. Base 2. Collector 3. Emitter 2SC5449 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current .. Symbol VCBO VCEO VEBO IC ic(peak) PC Tj Tstg Note1 Ratings 1500 700 6 12 24 50 150 - 55 to +150 Unit V V V A A W °C °C Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Emitter to base breakdownvoltage Collector cutoff current DC current transfer ratio DC current transfer ratio Collector to emitter saturationvoltage Base to emitter saturationvoltage Fall time Fall time Symbol V(BR)CEO V(BR)EBO ICES h FE1 h FE2 VCE(sat) VBE(sat) tf tf Min 700 6 - 10 3.5 - - - - Typ - - - - - - - 0.2 0.15 Max - - 500 30 6.5 5 1.5 0.4 - V V µs µs Unit V V µA Test Conditions IC = 10m A, RBE = ∞ IE = 10m A, IC = 0 VCE = 1500V, RBE = 0 VCE = 5 V, IC = 1A VCE = 5 V, IC = 7A IC = 7A, IB = 1.8A IC = 7A, IB = 1.8A ICP = 6A, IB1 = 2A f H = 31.5k Hz ICP = 6A, IB1 = 1.5A f H = 64k Hz 2SC5449 Main Characteristics Collector Power Dissipation vs. Temperature 80 Collector Power Dissipation Pc (W) 50 20 60 Collector Current I C(A) 10 5 2 1 0.5 0.2 0 50 100 Case Temperature 150 Tc (°C) 200 Area of Safe Operaion .. 0.1 100 5000 1000 10 Collector to Emitter Voltage V CE(V) L = 180 µH I B2...