C5812 Datasheet | Hitachi Semiconductor

Features - High power gain, Low noise figure at low power operation: |S21|2 = 17 d B typ, NF = 1.0 d B typ (VCE = 1 V, IC = 5 m A, f = 900 MHz) Outline MFPAK Note: Marking is “WG- “. 1 2 1. Emitter 2. Base 3. Collector 2SC5812 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 4 1.5 50 80 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 15   V voltage IC = 10 µA, IE = 0 Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance ICBO ICEO IEBO h FE Cre   0.1 µA 1 µA   0.1 µA 100 120 150   0.2  p F VCB = 15 V, IE = 0 VCE = 4 V, RBE = Infinite VEB = 0.8 V, IC = 0 VCE = 1 V, IC = 5 m A VCE = 1 V, Emitter ground, f = 1 MHz Collector output capacitance Cob  0.4 0.7 p F VCB = 1 V, IE = 0, f = 1 MHz Gain bandwidth product Gain bandwidth product Forward transmission coefficient f T(1) 11  GHz VCE = 1V, IC = 5 m A f...