D1113 Datasheet | Hitachi Semiconductor

2SD1113(K) Silicon NPN Triple Diffused .. Application Igniter Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 6 kΩ (Typ) 450 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC - Tj Tstg Ratings 300 300 7 6 10 40 150 - 55 to +150 Unit V V V A A W °C °C 2SD1113(K) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter sustain voltage .. Emitter to base breakdown Symbol V(BR)CBO VCEO(sus) V(BR)EBO I CEO h FE VCE(sat) VBE(sat) t on t off Min 300 300 7 - 500 - - - - Typ - - - - - - - 2.0 23 Max 500 - - 100 - 1.5 2.0 - - Unit V V V µA Test conditions I C = 0.1 m A, IE = 0 I C = 3 A, PW = 50 µs, f = 50 Hz, L = 10 m H I E = 50 m A, IC = 0 VCE = 300 V, RBE = ∞ VCE = 2 V, IC = 4 A- 1 I C = 4 A, IB = 40 m A- 1 I C = 4 A, IB = 40 m A- 1 I C = 4 A, IB1...