D2101 Datasheet | Hitachi Semiconductor

2SD2101 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 1 1. Base 2. Collector 3. Emitter 12 3 3 kΩ (Typ) 150 Ω (Typ) 3 2SD2101 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC - Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg Rating 200 200 7 10 15 2 30 150 - 55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 200 200 170 7 - - 1500 - - - - Typ - - - - - - - - - - - Max - - - - 10 50 - 1.5 3.0 2.0 3.5 V V Unit V V V V µA Test conditions I C = 0.1 m A, IE = 0 I C = 25 m A, RBE = ∞ I C = 5 A, L = 5 m H I E = 50 m A, IC = 0 VCB = 180 V, IE = 0 VCE = 180 V, RBE = ∞ VCE = 3 V, IC = 5 A- 1 I C = 5 A, IB = 10 m A- 1 I C = 10 A, IB = 100 m A- 1 I C = 5 A, IB = 10 m A- 1 I C = 10 A, IB = 100 m A- 1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(SUS) V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. h FE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 2SD2101 Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) 20 10 Collector current IC (A) 5 i C (peak) DC ) s °C 1m 25 = s m (T C 0 =1 tion PW era Op Area of Safe...