D655 Datasheet | Hitachi Semiconductor

2SD655 Silicon NPN Epitaxial Application Low frequency power amplifier, Muting Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Free Datasheet http://../ 2SD655 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C(peak) PC Tj Tstg Ratings 30 15 5 0.7 1.0 500 150 - 55 to +150 Unit V V V A A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 15 5 - - - 250 - Typ - - - - - 0.15 - 250 Max - - - 1.0 1.0 0.5 1200 - MHz Unit V V V µA V V Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 150 m A I C = 500 m A, IB = 50 m A- 2 VCE = 1 V, IC = 150 m A- 2 VCE = 1 V, IC = 150 m A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Base to emitter voltage Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product V(BR)EBO I CBO VBE VCE(sat) h FE- 1 f T Notes: 1. The 2SD655 is grouped by h FE as follows. 2. Pulse test D 250 to 500 E 400 to 800 F 600 to 1200 Free Datasheet http://../ 2SD655 Typical Output Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation Pc (m W) 600 Collector Current IC (m A) 40 50 0.015...