D970 Datasheet | Hitachi Semiconductor

2SD970(K) .. Silicon NPN Triple Diffused Application Medium speed and power switching plementary pair with 2SB791(K) Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 2 kΩ (Typ) 200 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC - Tj Tstg Ratings 120 120 7 8 12 40 150 - 55 to +150 Unit V V V A A W °C °C 2SD970(K) .. Electrical Characteristics (Ta = 25°C) Item Symbol Min 120 7 - - 1000 - - - - - - - Typ - - - - - - - - - 0.4 5.4 1.1 Max - - 100 10 20000 1.5 3.0 2.0 3.5 - - - V V V V µs µs µs Unit V V µA µA Test conditions I C = 25 m A, RBE = ∞ I E = 50 m A, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 4 A- 1 I C = 4 A, IB = 8 m A- 1 I C = 8 A, IB = 80 m A- 1 I C = 4 A, IB = 8 m A- 1 I C = 8 A, IB = 80 m A- 1 I C = 4 A, IB1 = - IB2 = 8 m A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test. h FE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 t on t stg tf Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) 30 i C (peak) Collector current IC (A) 10 3 1.0 0.3 0.1 0.03 0 50 100 Case temperature TC (°C) 150 1 Area of Safe Operation 1...