HAT1016R Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP- 8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings - 30 ± 20 - 4.5 - 36 - 4.5 Unit V V A A A W W °C °C Body- drain diode reverse drain current I DR Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Pch Pch Tch Tstg Note2 Note3 2 3 150 - 55 to + 150 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min - 30 ±20 - - - 1.0 - - 4 - - - - - - - - -...