HAT1021R
HAT1021R is Silicon P-Channel Power MOSFET manufactured by Hitachi Semiconductor.
Features
- -
- - Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting
Outline
SOP- 8
8 5 7 6
5 6 7 8 D D D D
3 1 2
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings
- 20 ± 10
- 5.5
- 44
- 5.5
Unit V V A A A W °C °C
Body- drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg
Note2
2.5 150
- 55 to +150
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item Symbol Min
- 20 ± 10
- -
- 0.5
- - 6
- -
- -
- -
- -
- Typ
- -
- -
- 0.048 0.065 9.5 1200 630 200 20 120 175...
