HAT1036R
HAT1036R is Silicon P-Channel Power MOSFET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance R DS(on) = 11 mΩ typ
- Capable of -4 V gate drive
- Low drive current
- High density mounting
Outline
SOP- 8
8 5 7 6
5 6 7 8 D D D D
3 1 2
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg
Note2 Note1
Ratings -30 ±20 -12 -96 -12 2.5 150
- 55 to +150
Unit V V A A A W °C °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
Electrical Characteristics (Ta = 25°C)
Item Symbol Min -30
- - -1.0
- - 12
- -
- -
- -
- -
- -
- - Typ
- -
- - 11 21 20 4200 870 360 70 12 14 120 350 100 120 -0.85 55 Max
- ±0.1 -1 -2.5 14 34
- -
- -
- -
- -
- -
-...
