HAT1044M Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V source Outline TSOP- 6 4 5 6 1 2 5 6 D D D D 2 1 3 G 3 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID- 2 1 Ratings -30 ±20 -4.5 -18 -4.5 2 3 Unit V V A A A W W °C °C I D(pulse) - I DR- Pch (pulse)- 2.0 1.05 150 - 55 to +150 Pch (continuous) - Channel temperature Storage temperature Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW≤ 5s,Ta=25°C 3. When using the alumina ceramic board (50 x 50 x 0.7 mm) ,Ta=25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min -30 - - -1.0 - - 3 - - - - - - - - - Typ - - - - 50 80 5.5 600 220 150 12 85 55 55 -0.95 50 Max - ±0.1 -1 -2.5 60 105 - - - - - - - - - - Unit V µA µA V mΩ mΩ S p F p F p F ns ns ns ns V ns IF = -4.5A, VGS =...