HAT2025R Datasheet | Hitachi Semiconductor

Features - - - - - High speed switching Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP- 8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ± 20 8 64 8 2.5 150 - 55 to + 150 Unit V V A A A W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 ± 20 - - 1.3 - - 7 - - - - - - - - - Typ - - - - - 0.019 0.030 11 660 510 130 30 265 35 58 0.8 55 Max - - ± 10 10 2.4 0.026 0.050 - - - - - - - - 1.3 - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns V ns IF = 8 A, VGS = 0 Note3 IF = 8 A, VGS = 0 di F/ dt = 20 A/µs Test Conditions I D = 10 m A, VGS = 0 I G = ± 100 µA, VDS = 0 VGS = ± 16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 m A I D = 4 A, VGS = 10 V Note3 I D = 4 A, VGS = 4.5 V Note3 I D = 4 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1MHz VGS = 4 V, ID = 4 A VDD ≅ 10 V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body- drain diode forward voltage Body- drain diode reverse recovery time Note: 3. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Main Characteristics Power vs. Temperature Derating...