HAT2036R
HAT2036R is Silicon N-Channel Power MOSFET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance R DS(on) =12mΩ typ
- Capable of 4.5 V gate drive
- Low drive current
- High density mounting
- High speed switching tf=60ns typ.
Outline
SOP- 8
8 5 7 6
5 6 7 8 D D D D
3 1 2
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)
- I DR Pch- Tch Tstg
2 1
Ratings 30 ±20 12 96 12 2.5 150
- 55 to +150
Unit V V A A A W °C °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 30
- - 1.5
- - 12
- -
- -
- -
- -
- -
- - Typ
- -
- - 12 20 20 1200 380 200 23 4.0 6.0 40 300 35 60 0.9 35 Max
- ±0.1 1 3.0 15 30
- -
- -
- -
- -...
