HAT2039R Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP- 8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg Note2 Note3 Note1 Ratings 30 ± 12 8.0 64 8.0 2.0 3.0 150 - 55 to + 150 Unit V V A A A W W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 - - 0.4 - - 13 - - - - - - - - - - - - Typ - - - - 0.017 0.022 20 1420 410 260 20 12 8 23 165 215 185 0.85 30 Max - ± 0.1 1 1.4 0.022 0.032 - - - - - - - - - -...