HAT2040R Datasheet | Hitachi Semiconductor

Features - - - - Capable of 4 V gate drive Low drive current High density mounting Low on-resistance R DS(on) =6.2m typ Outline SOP- 8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ±20 15 120 15 2.5 150 - 55 to +150 Unit V V A A A W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS I GSS I DSS Min 30 - - 1.0 - - 18 - - - - - - - - - - - - Typ - - - - 6.2 9.0 30 4400 950 400 90 15 18 110 440 160 170 0.9 55 Max - ±0.1 1 2.5 8.0 13.0 - - - - - - - - - - - 1.17 - Unit V µA µA V mΩ mΩ S p F p F p F nc nc nc ns ns ns ns V ns IF = 15A, VGS = 0 Note3 IF = 15A, VGS = 0 di F/ dt =20A/µs Test Conditions I D = 10m A, VGS = 0 VGS = ±20V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10V, I D = 1m A I D = 8A, VGS = 10V Note3 I D = 8A, VGS = 4V Note3 I D = 8A, VDS = 10V Note3 VDS = 10V VGS = 0 f = 1MHz VDD = 10V VGS = 10V I D = 15A VGS = 4V, ID = 8A VDD ≅ 10V Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss...