HAT2044R Datasheet | Hitachi Semiconductor

Features - - - - Capable of 2.5 V gate drive Low drive current High density mounting Low on-resistance R DS(on) = 6.5 mΩ typ (at VGS = 4.5V) Outline SOP- 8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ± 12 15 120 15 2.5 150 - 55 to + 150 Unit V V A A A W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 - - 0.4 - - - 24 - - - - - - - - - - - - Typ - - - - 6.5 7.0 9.0 40 3420 950 480 48 32 16 45 285 470 360 0.85 45 Max - ± 0.1 1 1.4 9.0 9.5 13.0 - - - - - - - - - - - 1.1 - Unit V µA µA V mΩ mΩ mΩ S p F p F p F nc nc nc ns ns ns ns V ns IF = 15 A, VGS = 0 Note3 IF = 15 A, VGS = 0 di F/ dt = 20 A/ µs Test Conditions I D = 10 m A, VGS = 0 VGS = ±12 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 m A I D = 8 A, VGS = 4.5 V Note3 I D = 8 A, VGS = 4.0 V Note3 I D = 8 A, VGS = 2.5 V Note3 I D = 8 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4 V I D = 15 A VGS = 4 V, ID = 8 A VDD ≅ 10 V Drain to source breakdown voltage V(BR)DSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance I GSS I DSS VGS(off) RDS(on) RDS(on) RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body- drain diode forward voltage Body- drain diode reverse recovery time Note: 3. Pulse test |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t...