HAT2045T Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP- 8 65 34 1 D 8 D 4 G 5 G S S 2 3 S S 6 7 MOS1 MOS2 1, 8 2, 3, 6, 7 4, 5 D Sou G Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg Note2 Note3 Note1 Ratings 28 ±12 6.0 48 6.0 1.0 1.5 150 - 55 to +150 Unit V V A A A W W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 28 ±12 - - 0.4 - - 8 - - - - - - - - - Typ - - - - - 0.020 0.027 13 680 240 170 12 110 90 100 0.85 40 Max - - ±10 1 1.4 0.025 0.037 - - - -...