HAT2053M
HAT2053M is Silicon N-Channel Power MOSFET manufactured by Hitachi Semiconductor.
Features
- -
- - Low on-resistance Low drive current High density mounting 2.5V gate drive device can be driven from 3V source
Outline
TSOP- 6
4 5 6 3 2 1
1 2 5 6 D D D D
3 G
4 Source 3 Gate 1, 2, 5, 6 Drain
S 4
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID-
2 1
Ratings 20 ±12 6.1 24.4 6.1
2 3
Unit V V A A A W W °C °C
I D(pulse)
- I DR-
Pch (pulse)-
2.0 1.05 150
- 55 to +150
Pch (continuous)
- Channel temperature Storage temperature Tch Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW≤ 5s,Ta=25°C 3. When using the alumina ceramic board (50 x 50 x 0.7 mm) ,Ta=25°C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 20
- - 0.4
- - 6.5
- -
- -
- -
- -
- Typ
- -
- - 28 37 11 570 220 160 15 100 90 105 0.95 (50) Max
- ±0.1 1 1.4 33 48
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