HAT2064R Datasheet | Hitachi Semiconductor

Features - - - - Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R DS(on) = 5.0 mΩ typ (at VGS = 10V) Outline SOP-8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Ambient Thermal Impedance Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Note2 Note2 Note1 Ratings 30 ± 20 16 128 16 2.5 50 150 - 55 to + 150 Unit V V A A A W ° C/W °C °C θ ch-a Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 30 ± 20 - - 1.0 - - 18 - - - - - - - - - - - - Typ - - - - - 5.0 7.0 30 2200 600 330 40 6 8 20 35 60 16 0.9 50 Max - - ± 10 1 2.5 6.3 10 - - - - - - - - - - -...