HL1326MF
HL1326MF is InGaAsP Laser Diodes manufactured by Hitachi Semiconductor.
Description
The HL1326MF is a 1.3 µm In Ga As P Fabry Perot laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source in short and medium range fiberoptic munication systems and other applied optical equipment. It has high optical power with low drive current and wide operating temperature range (- 40 to +85°C). The pact package is suitable for module assembly.
Features
- Wide operating temperature range: Topr =
- 40 to +85°C
- High output power: 10 m W (Pulse) 5 m W (CW)
- Low operating current: Iop (PO = 5 m W) = 20 m A (Typ @TC = 25°C) Iop (PO = 5 m W) = 40 m A (Typ @TC = 85°C)
Absolute Maximum Ratings (TC = 25°C)
Item Optical output power Symbol PO Rated Value 10 (Pulse)
- 5 (CW) LD reverse voltage PD reverse voltage PD forward current
..
Unit m W m W V V m A °C °C
VR (LD) VR (PD) I F (PD) Topr Tstg
2 15 1
- 40 to +85
- 40 to +100
Operating temperature Storage temperature Note:
1. Maximum 50% duty cycle, maximum 1 µs pulse width
Optical and Electrical Characteristics (TC = 25°C)
Item Threshold current Optical output power Slope efficiency Symbol Ith PO ηs λc σ θ// θ⊥ tr tf Is I (DARK) Ct Min
- 5 0.3 0.15 Lasing wavelength Spectral width Beam divergence (parallel) Beam divergence (perpendicular) Rise time Fall time Monitor current PD dark current PD capacitance Typ 8
- 0.4 0.25 Max 20
- -
- Unit m A m W m W/m A Kink free- 1 TC = 25°C TC = 85°C PO = 5 m W, RMS PO = 5 m W, RMS PO = 5 m W, FWHM PO = 5 m W, FWHM 10 to 90% 90 to 10% PO = 5 m W, VR(PD) = 5 V VR(PD) = 5 V VR(PD) = 5 V, f = 1 MHz Test Conditions
1280 1310 1340 nm
- -
- -
- 100
- -
- 2 30 40
- -
- - 15
- -
- - 0.5 0.5
- 350 20 2 nm deg. deg. ns ns µA n A p F V
Photosensitivity saturation voltage VR(S) Note:
1. Kink free up to 5m W is confirmed at the tempratures of 10 °C, 25°C and 85°C.
Typical Characteristic...
