HL7851G
HL7851G is GaAlAs Laser Diode manufactured by Hitachi Semiconductor.
Description
.. structure. It is suitable as a light source for optical disk memories, levelers and various other types of optical equipment. Hermetic sealing of the package assures high reliability. The HL7851G is a high power 0.78 µm band Ga Al As laser diode with a multi-quantum well (MQW)
Features
- -
- - Visible light output: λp = 785 nm Typ Small beam ellipticity: 9.5:23 High output power: 50 m W (CW) Built-in monitor photodiode
Absolute Maximum Ratings (TC = 25°C)
Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Note: Symbol PO PO (pulse) VR (LD) VR (PD) Topr Tstg Rated Value 50 60- 2 30
- 10 to +60
- 40 to +85
Unit m W m W V V °C °C
1. Maximum 50% duty cycle, maximum 1 µs pulse width
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Item
Optical and Electrical Characteristics (TC = 25°C)
Symbol PO Ith η Iop Vop λp θ// θ⊥ Is AS Min 50
- 0.35
- - 775 8 18 25
- Typ
- 45 0.55 140 2.3 785 9.5 23
- 5 Max
- 70 0.7 170 2.7 795 12 28 150
- Unit m W m A m W/m A m A V nm deg. deg. µA µm 40 m W/ I (45 m W)
- I (5 m W) PO = 50 m W PO = 50 m W PO = 50 m W PO = 50 m W, FWHM PO = 50 m W, FWHM PO = 5 m W, VR (PD) = 5 V PO = 5 m W, NA = 0.4 Test Conditions Kink free Optical output power Threshold current Slope efficiency Operating current LD Operating voltage Lasing wavelength Beam divergence (parallel) Beam divergence (perpendicular) Monitor current Astigmatism
Typical Characteristic Curves
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Typical Characteristic Curves...
