HL7859MG Datasheet | Hitachi Semiconductor

Description The HL7859MG is a 0.78 µm band Ga Al As laser diode with a multi-quantum well (MQW)structure. It is suitable as a light source for optical disc memories and various other types of optical equipment. Hermetic sealing of the small package (φ5.6 mm) assures high reliability. Application - Optical disc memories. Features - - - - High output power Visible light output Small package Low astigmatism : 35 m W (CW) : λp = 775 to 795 nm : φ 5.6 mm dia. : 5 µm Typ (P O = 5 m W) Absolute Maximum Ratings (TC = 25°C) Item Optical output power Pulse optical output power Laser diode reverse voltage Symbol PO PO (pulse) VR(LD) Value 35 42 - 2 30 - 10 to +60 - 40 to +85 Unit m W m W V V °C °C Photo diode reverse voltage VR(PD) Operating temperature Storage temperature Topr Tstg Note: Pulse condition : Pulse width = 1 µs, duty = 50% Optical and Electrical Characteristics (TC = 25°C) Items Optical output power Threshold current Operating voltage Slope efficiency Lasing wavelength Beam divergence parallel to the junction Beam divergence θ⊥ parpendicular to the junction Monitor current Asitgmatism Is AS 18 0.2 - 23 - 5 28 2 - deg. m A µm PO = 35 m W PO = 35 m W, VR(PD) = 5 V PO = 5 m W, NA = 0.4 Symbols Min PO Ith VOP ηs λp θ// 35 - - 0.35 775 8 Typ - 35 2.1 0.65 785 9.5 Max - 60 2.5 0.80 795 12 Units m W m A V Test Conditions Kink free - - PO = 35 m W m W/m A 21 (m W) / (I(28 m W) - I (7 m W) ) nm deg. PO = 35 m W PO = 35 m W Note: Kink free is confirmed at the temperature of 25°C. Curve Characteristics...