HL8325G Datasheet | Hitachi Semiconductor

Description The HL8325G is a high-power 0.8 µm band Ga Al As laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types of optical equipment. Features - - - - Infrared light output: λp = 820 to 840 nm High power: standard continuous operation at 40 m W (CW), pulsed operation at 50 m W Built-in monitor photodiode Single longitudinal mode Absolute Maximum Ratings (TC = 25°C) Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Note: Symbol PO PO (pulse) VR (LD) VR (PD) Topr Tstg Rated Value 40 50- 2 30 - 10 to +60 - 40 to +85 Units m W m W V V °C °C 1. Maximum 50% duty cycle, maximum 1 µs pulse width Optical and Electrical Characteristics (TC = 25 ± 3 °C) Item Optical output power Threshold current Slope efficiency Lasing wavelength Beam divergence (parallel) Beam divergence (perpendicular) Monitor current Astigmatism Symbol PO Ith η λp θ// θ⊥ Is AS Min 40 - 0.4 820 7 18 20 - Typ - 40 0.5 830 10 22 40 5 Max - 70 0.9 840 14 32 130 - Unit m W m A m W/m A nm deg. deg. µA µm 24 m W/ I (32 m W) - I (8 m W) PO = 40 m W PO = 40 m W, FWHM PO = 40 m W, FWHM VR (PD) = 5 V, PO = 4 m W PO = 4 m W, NA = 0.4 Test Conditions Kink free Typical Characteristic Curves Typical Characteristic Curves...